| PART |
Description |
Maker |
| UGF1006GD UGF1004GD-12 UGF1005GD |
10.0 Amperes Insulated Package Dual Doubler Polarity Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF1605GD |
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| UGF1005G UGF1004G UGF1006G |
10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| HBTA8A60 |
INNER INSULATED TYPE TRIAC (II TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| PM100CSD120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
http://
Mitsubishi Electric Semiconductor
|
| PM100CSD060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RVA12005 PM50RVA120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
|
| PM75CSE120 PM75CSE12005 |
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric Semiconductor
|
| PM600HSA12 PM600HSA120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM52AUBW060 |
Flat-Base Type Insulated Package
|
Mitsubishi Electric
|
